 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDP5680/FDB5680 July 2000 FDP5680/FDB5680 General Description 60V N-Channel PowerTrenchTM MOSFET Features 40 A, 60 V. RDS(ON) = 0.020 @ VGS = 10 V RDS(ON) = 0.023 @ VGS = 6 V. Critical DC electrical parameters specified at evevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High performance trend technology for extremely low RDS(ON). 175C maximum junction temperature rating. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency. D D G G D TO-220 S FDP Series G S TC = 25C unless otherwise noted TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Parameter FDP5680 60 20 40 120 65 0.43 FDB5680 Units V V A W W/C C - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range -65 to +175 Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.3 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB5680 FDP5680 Device FDB5680 FDP5680 Reel Size 13'' Tube Tape Width 24mm N/A Quantity 800 45 2000 Fairchild Semiconductor International FDP5680/FDB5680 Rev. C FDP5680/FDB5680 Electrical Characteristics Symbol WDSS IAR Tc = 25C unless otherwise noted Parameter (Note1) Test Conditions Min Typ Max 90 40 Units mJ A Drain-Source Avalanche Ratings Single Pulse Drain-Source VDD = 30 V, ID = 40A Avalanche Energy Maximum Drain-Source Avalanche Current Off Characteristics BVDSS BVDSS T J IDSS IGSSF IGSSR Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 1) 60 60 1 100 -100 V mV/C A nA nA ID = -250 A, Referenced to 25C VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V On Characteristics VGS(th) VGS(th) T J RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = -250 A, Referenced to 25C VGS = 10 V, ID = 20 A, VGS = 10 V, ID = 20 A,TJ = 125C VGS = 6 V, ID = 19 A VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 20 A 2 2.5 -6.4 0.016 0.022 0.018 4 V mV/C 0.020 0.035 0.023 ID(on) gFS 20 43 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 1) VDS = 25 V, VGS = 0 V, f = 1.0 MHz 1850 230 95 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 15 9 35 16 27 18 56 26 46 ns ns ns ns nC nC nC VDS = 30 V, ID = 20 A VGS = 10 V 33 6.5 7.5 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 20 A (Note 1) (Note 1) 40 0.9 1.2 A V Note: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDP5680/FDB5680 Rev. C FDP5680/FDB5680 Typical Characteristics 80 70 60 50 40 30 20 10 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 4.5V 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) VGS = 10V 6.0V 5.0V 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V Figure 1. On-Region Characteristics. 2 0.05 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = 20A 0.04 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 RDS(ON), ON-RESISTANCE (OHM) 1.8 ID = 20A VGS = 10V 0.03 TA = 125oC 0.02 TA = 25oC 0.01 -25 0 25 50 75 100 o 125 150 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 60 50 25oC 125 C 40 30 20 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55 C o VGS = 0V 10 TA = 125 C 1 25 C 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) -55 C o o o ID, DRAIN CURRENT (A) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP5680/FDB5680 Rev. C FDP5680/FDB5680 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 20A 8 (continued) 2500 VDS = 10V 30V 20V 2000 CAPACITANCE (pF) f = 1MHz VGS = 0 V CISS 6 1500 4 1000 2 500 COSS CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) 0 0 10 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 1000 Figure 8. Capacitance Characteristics. 1500 SINGLE PULSE o RJC = 2.3 C/W TC = 25 C POWER (W) o ID DRAIN CURRENT (A) 100 1ms RDS(ON) LIMIT 1s 10s DC VGS = 10V SINGLE PULSE RJC = 2.3oC/W TC = 25 C o 1200 10ms 100ms 900 10 600 1 300 0.1 0.1 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 D = 0.5 (t), NORMALIZED EFFECTIVE 0.2 R JC (t) = r(t) * RJC R JC =2.3 C/W P(pk) 0.2 0.1 0.1 0.05 0.02 t1 t2 0.05 0.03 0.1 Single Pulse TJ - TC = P * RJC (t) Duty Cycle, D = t1 /t2 10 t 1 ,TIME (ms) 100 1000 3000 10000 r 0.5 1 Figure 11. Transient Thermal Response Curve. FDP5680/FDB5680 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. E |
Price & Availability of FDB5680
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |